US 12,408,569 B2
Titanium silicon nitride barrier layer
Jae Seok Heo, Dublin, CA (US); Jerry Mack, San Jose, CA (US); Somilkumar J. Rathi, San Jose, CA (US); and Niloy Mukherjee, San Ramon, CA (US)
Assigned to Eugenus, Inc., San Jose, CA (US)
Filed by Eugenus, Inc., San Jose, CA (US)
Filed on Oct. 17, 2023, as Appl. No. 18/488,851.
Application 18/488,851 is a continuation of application No. 16/595,912, filed on Oct. 8, 2019, granted, now 11,832,537.
Prior Publication US 2024/0276896 A1, Aug. 15, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10N 70/00 (2023.01); H10B 63/00 (2023.01)
CPC H10N 70/8413 (2023.02) [H10B 63/24 (2023.02); H10N 70/826 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A method of forming a diffusion barrier for an integrated circuit device, the method comprising:
forming the diffusion barrier comprising TiSiN without aid of a plasma by exposing a substrate to one or more vapor deposition cycles, each of the vapor deposition cycles comprising alternating exposures to one or more first deposition phases followed by one or more second deposition phases,
wherein each of the one or more first deposition phases comprises sequential exposures of the substrate to a titanium (Ti) precursor comprising TiCl4 alternating with a nitrogen (N) precursor,
wherein each of the one or more second deposition phases comprises sequential exposures of the substrate to a silicon (Si) precursor alternating with a N precursor, and
wherein in at least one of the first deposition phases, the exposure to the N precursor follows the exposure to the Ti precursor without an intervening exposure to the Si precursor.