US 12,408,567 B2
Memory device structure with data storage element
Hai-Dang Trinh, Hsinchu (TW); Hsing-Lien Lin, Hsinchu (TW); and Cheng-Yuan Tsai, Chupei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 25, 2023, as Appl. No. 18/358,685.
Application 17/000,537 is a division of application No. 15/821,901, filed on Nov. 24, 2017, granted, now 10,804,464, issued on Oct. 13, 2020.
Application 18/358,685 is a continuation of application No. 17/324,328, filed on May 19, 2021, granted, now 11,758,830.
Application 17/324,328 is a continuation of application No. 17/000,537, filed on Aug. 24, 2020, granted, now 11,018,297, issued on May 25, 2021.
Prior Publication US 2023/0389453 A1, Nov. 30, 2023
Int. Cl. H10N 70/00 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/828 (2023.02) [H10N 70/063 (2023.02); H10N 70/24 (2023.02); H10N 70/245 (2023.02); H10N 70/801 (2023.02); H10N 70/826 (2023.02); H10N 70/841 (2023.02); H10N 70/8833 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a substrate;
a data storage element over the substrate;
a protective element extending into the data storage element, wherein a bottom surface of the protective element is between a top surface of the data storage element and a bottom surface of the data storage element;
a first electrode electrically connected to the data storage element;
a second electrode electrically connected to the data storage element;
an ion diffusion barrier layer between the data storage element and the second electrode, wherein the ion diffusion barrier layer is spaced apart from the second electrode, and the protective element extends across opposite surfaces of the ion diffusion barrier layer; and
a metal capping element between the ion diffusion barrier layer and the second electrode, wherein the protective element extends upwards along sidewalls of the data storage element, the ion diffusion barrier layer, the metal capping element, and the second electrode to reach a height level higher than a topmost surface of the second electrode.