US 12,408,558 B2
Method for constructing magnetic tunneling junction devices and use of device for spin-dependent transport characterization
Quan Qing, Chandler, AZ (US)
Assigned to ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY, Scottsdale, AZ (US)
Appl. No. 18/004,660
Filed by Quan Qing, Chandler, AZ (US)
PCT Filed Jul. 6, 2021, PCT No. PCT/US2021/040568
§ 371(c)(1), (2) Date Jan. 6, 2023,
PCT Pub. No. WO2022/010935, PCT Pub. Date Jan. 13, 2022.
Claims priority of provisional application 63/049,477, filed on Jul. 8, 2020.
Prior Publication US 2023/0247910 A1, Aug. 3, 2023
Int. Cl. H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/20 (2023.01)
CPC H10N 50/01 (2023.02) [H10N 50/10 (2023.02); H10N 50/20 (2023.02)] 21 Claims
OG exemplary drawing
 
1. An electronic device, comprising:
a cis-fluidic channel/chamber and a trans-fluidic channel/chamber fabricated on a planar substrate;
a channel in between and connecting the cis-fluidic and trans-fluidic channels/chambers; and
a first non-magnetic electrode and a second non-magnetic electrode sealed inside the channel, wherein the first and second non-magnetic electrodes being electrochemically deposited with one or more magnetic metal materials within the channel and under feed-back control, thereby forming a magnetic tunneling junction such that the distance between the first and second non-magnetic electrodes is between about 1-100 nm and coercivity of each of the electrodes can be individually tuned.