| CPC H10N 10/817 (2023.02) [H10N 10/17 (2023.02)] | 20 Claims |
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1. A thermoelectric element comprising:
a first substrate;
an insulating layer disposed on the first substrate;
a first electrode disposed on the insulating layer;
a bonding layer disposed on the first electrode;
a semiconductor structure disposed on the bonding layer;
a second electrode disposed on the semiconductor structure; and
a second substrate formed on the second electrode,
wherein an upper surface of the insulating layer includes a first concave surface vertically overlapping the first electrode,
the bonding layer includes a first area vertically overlapping the first concave surface and the semiconductor structure, and a second area vertically overlapping the first concave surface and not vertically overlapping the semiconductor structure, and
a void density of the first area is smaller than a void density of the second area.
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