US 12,408,511 B2
Thin-film transistor substrate and display apparatus including the same
Keunwoo Kim, Yongin-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do (KR)
Filed by SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed on Jan. 12, 2022, as Appl. No. 17/573,956.
Claims priority of application No. 10-2021-0064213 (KR), filed on May 18, 2021.
Prior Publication US 2022/0376117 A1, Nov. 24, 2022
Int. Cl. H10K 59/121 (2023.01); H10D 30/67 (2025.01); H10K 50/844 (2023.01); H10K 59/80 (2023.01)
CPC H10K 59/1213 (2023.02) [H10D 30/6755 (2025.01); H10D 30/6757 (2025.01); H10K 50/844 (2023.02); H10K 59/1216 (2023.02); H10K 59/873 (2023.02)] 10 Claims
OG exemplary drawing
 
1. A thin-film transistor substrate comprising:
a substrate;
a semiconductor layer on the substrate, wherein the semiconductor layer comprises a first conductive region, a second conductive region, and a first channel region between the first conductive region and the second conductive region;
a gate insulating layer on the semiconductor layer, wherein the gate insulating layer comprises a first charge implanted region which overlaps a portion of the first channel region and into which charged ions are implanted; and
a first gate electrode on the gate insulating layer to overlap the first channel region,
wherein a distance between a center of the first charge implanted region and one of the first conductive region and the second conductive region is less than a distance between a center of the first channel region and the one of the first conductive region and the second conductive region when viewed in a thickness direction of the substrate.