US 12,408,509 B2
Optoelectronic device and manufacturing method for an optoelectronic device
Gunther Haas, St Egreve (FR); Benoit Dugrenil, Grenoble (FR); Sébastien Guillamet, Lyons (FR); Myriam Tournaire, Grenoble (FR); and Tony Maindron, Grenoble (FR)
Assigned to MICROOLED, Grenoble (FR); and COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
Appl. No. 18/004,068
Filed by MICROOLED, Grenoble (FR); and COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
PCT Filed Jul. 2, 2021, PCT No. PCT/IB2021/055950
§ 371(c)(1), (2) Date Jan. 2, 2023,
PCT Pub. No. WO2022/003640, PCT Pub. Date Jan. 6, 2022.
Claims priority of application No. 2006988 (FR), filed on Jul. 2, 2020.
Prior Publication US 2023/0337454 A1, Oct. 19, 2023
Int. Cl. H10K 50/852 (2023.01); H10K 39/30 (2023.01); H10K 50/12 (2023.01); H10K 50/13 (2023.01); H10K 71/20 (2023.01); H10K 71/30 (2023.01); H10K 50/816 (2023.01); H10K 50/818 (2023.01)
CPC H10K 50/852 (2023.02) [H10K 39/30 (2023.02); H10K 50/12 (2023.02); H10K 50/131 (2023.02); H10K 71/233 (2023.02); H10K 71/30 (2023.02); H10K 50/816 (2023.02); H10K 50/818 (2023.02)] 18 Claims
OG exemplary drawing
 
15. A method of manufacturing an optoelectronic device comprising:
depositing a first transparent conductive layer formed of a first transparent conductive material on a reflective surface;
depositing a first mask that defines and protects a location of a second group of pixels and a third group of pixels;
removing the first transparent conductive layer by wet etching at locations not protected by the first mask, the non-protected locations including a location for a first group of pixels,
removing the first mask after removing the first transparent conductive layer;
depositing a second transparent conductive layer formed of a second transparent material;
depositing a third transparent conductive layer formed of the first transparent conductive material;
depositing a second mask that defines and protects a location of the third group of pixels;
removing the third transparent conductive layer by wet etching at locations not protected by the second mask, the non-protected locations including a location for the first group of pixels and the second group of pixels;
removing the second mask after removing the third transparent conductive layer;
depositing a fourth transparent conductive layer formed of the second transparent conductive material;
depositing a third mask that defines and protects a location of the first group of pixels, the second group of pixels; and
removing the second transparent conductive layer, the fourth transparent conductive layer, the reflective layer and, the transparent layer by dry etching at the locations not protected by the third mask.