US 12,408,504 B2
Flip-chip light emitting diode and manufacturing method thereof
Wei-Ping Xiong, Xiamen (CN); Shu-Fan Yang, Xiamen (CN); Chun-Yi Wu, Xiamen (CN); and Chaoyu Wu, Xiamen (CN)
Assigned to XIAMEN SAN'AN OPTOELECTRONICS CO., LTD., Xiamen (CN)
Filed by XIAMEN SAN'AN OPTOELECTRONICS CO., LTD., Xiamen (CN)
Filed on Sep. 6, 2023, as Appl. No. 18/462,397.
Application 18/462,397 is a continuation of application No. 17/337,361, filed on Jun. 2, 2021, granted, now 11,785,793.
Application 17/337,361 is a continuation of application No. 16/221,706, filed on Dec. 17, 2018, granted, now 11,056,669.
Application 16/221,706 is a continuation of application No. PCT/CN2017/085661, filed on May 24, 2017.
Claims priority of application No. 201610450480.0 (CN), filed on Jun. 22, 2016.
Prior Publication US 2023/0413599 A1, Dec. 21, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10K 50/84 (2023.01); H01L 21/28 (2006.01); H10H 20/01 (2025.01); H10H 20/80 (2025.01); H10H 20/814 (2025.01); H10H 20/82 (2025.01); H10H 20/825 (2025.01); H10H 20/832 (2025.01); H10H 20/833 (2025.01); H10H 20/85 (2025.01); H10H 29/14 (2025.01)
CPC H10H 29/142 (2025.01) [H01L 21/28 (2013.01); H10H 20/0137 (2025.01); H10H 20/80 (2025.01); H10H 20/814 (2025.01); H10H 20/82 (2025.01); H10H 20/825 (2025.01); H10H 20/833 (2025.01); H10H 20/835 (2025.01); H10H 20/85 (2025.01); H10K 50/84 (2023.02)] 17 Claims
OG exemplary drawing
 
1. A flip-chip light emitting diode comprising:
a light-emitting epitaxial laminated layer having a first surface, and a second surface opposing the first surface, and including a first semiconductor layer, an active layer, and a second semiconductor layer, wherein the first surface is a roughened surface;
a transparent bonding medium layer over the first surface of the light-emitting epitaxial laminated layer and bonded with a transparent substrate;
a first electrode and a second electrode respectively over a first electrode region and a second electrode region over the second surface of the light-emitting epitaxial laminated layer;
wherein the transparent substrate has a thickness of less than 80 μm;
wherein the transparent bonding medium layer includes a first sub-layer and a second sub-layer, wherein the first sub-layer is adjacent to the first surface of the light-emitting epitaxial laminated layer, and the second sub-layer is adjacent to the transparent substrate;
wherein the first sub-layer has a refractive index larger than a refractive index of the second sub-layer;
wherein the first sub-layer has a thickness less than 1 μm and comprises at least one of Al2O3 or SiNx, configured to reduce a refractive index difference between the light-emitting epitaxial laminated layer and the transparent bonding medium layer, thereby improving a light extraction efficiency,
wherein the second sub-layer has a thickness of more than 1 μm and comprises a silicon oxide layer;
wherein the transparent bonding medium layer has a flat upper surface distal from the transparent substrate; and
wherein the second sub-layer has a circular array structure.