US 12,408,499 B2
LED array package
Vladimir Odnoblyudov, Danville, CA (US); Scott West, Pleasanton, CA (US); Cem Basceri, Livermore, CA (US); and Zhengqing Gan, Livermore, CA (US)
Assigned to Bridgelux, Inc., Fremont, CA (US)
Filed by Bridgelux, Inc., Fremont, CA (US)
Filed on Nov. 30, 2023, as Appl. No. 18/525,084.
Application 18/525,084 is a division of application No. 18/453,164, filed on Aug. 21, 2023.
Application 18/453,164 is a continuation of application No. 17/735,362, filed on May 3, 2022, granted, now 11,764,341, issued on Sep. 19, 2023.
Application 17/735,362 is a continuation of application No. 17/132,325, filed on Dec. 23, 2020, granted, now 11,355,680, issued on Jun. 7, 2022.
Application 17/132,325 is a continuation of application No. 16/267,958, filed on Feb. 5, 2019, granted, now 10,903,403, issued on Jan. 26, 2021.
Application 16/267,958 is a continuation of application No. 14/449,142, filed on Jul. 31, 2014, granted, now 10,205,069, issued on Feb. 12, 2019.
Prior Publication US 2024/0097084 A1, Mar. 21, 2024
Int. Cl. H10H 20/854 (2025.01); H10H 20/841 (2025.01)
CPC H10H 20/854 (2025.01) [H10H 20/841 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A light emitting apparatus comprising:
a base substrate;
a light emitting die coupled to the base substrate and having an active region configured to emit light, wherein the light emitting die comprises a vertical light emitting diode (LED); and
a p-electrode formed on a bottom of a p-type semiconductor region and on a top of a surface of a n-type semiconductor region such that a portion of the p-electrode is routed to a top of the vertical LED and a n-type electrode formed on the top of the surface of the n-type semiconductor region disposed on the light emitting die opposite to the base substrate, wherein the active region is formed between the n-type semiconductor region and the p-type semiconductor region.