US 12,408,491 B2
Method for manufacturing a native emission matrix having doped and porosified In(x)GaN
Ludovic Dupre, Grenoble (FR); Carole Pernel, Grenoble (FR); Amélie Dussaigne, Grenoble (FR); and Patrick Le Maitre, Grenoble (FR)
Assigned to COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES, Paris (FR)
Filed by COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES, Paris (FR)
Filed on Jun. 10, 2022, as Appl. No. 17/806,437.
Claims priority of application No. FR2106387 (FR), filed on Jun. 16, 2021.
Prior Publication US 2022/0406968 A1, Dec. 22, 2022
Int. Cl. H10H 20/825 (2025.01); H01L 25/075 (2006.01); H10H 20/01 (2025.01)
CPC H10H 20/8252 (2025.01) [H01L 25/0753 (2013.01); H10H 20/0137 (2025.01)] 5 Claims
OG exemplary drawing
 
1. A native emission matrix comprising:
a base structure comprising successively a substrate, a layer of non-intentionally doped GaN, a layer of doped In(x)GaN with x from 0 to 8% and an epitaxial regrowth layer of not-intentionally doped In(x)GaN with x from 0 to 8%,
a first mesa formed in the base structure, the first mesa comprising the layer of doped In(x)GaN, and a part of the thickness of the layer of non-intentionally doped GaN, the first mesa being covered by a first LED structure emitting at a first wavelength,
a second mesa formed in the base structure, the second mesa comprising the epitaxial regrowth layer of not-intentionally doped In(x)GaN and a part of the thickness of the layer of doped In(x)GaN that is porosified, the second mesa being covered by a second LED structure emitting at a second wavelength,
wherein the layer of non-intentionally doped GaN and the epitaxial regrowth layer of not-intentionally doped In(x)GaN have dopant concentrations preventing them from being porosified.