| CPC H10H 20/825 (2025.01) [H10H 20/8162 (2025.01); H10H 20/855 (2025.01)] | 23 Claims |
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1. A semiconductor light-emitting device, comprising:
a first semiconductor layer above a substrate, the first semiconductor layer containing a nitride semiconductor of a first conductivity type;
an active layer above the first semiconductor layer, the active layer containing a nitride semiconductor that includes Ga or In;
an electron barrier layer above the active layer, the electron barrier layer containing a nitride semiconductor including at least Al and being of a second conductivity type different from the first conductivity type; and
a second semiconductor layer above the electron barrier layer, the second semiconductor layer containing a nitride semiconductor of the second conductivity type, wherein:
the electron barrier layer includes an increasing Al composition ratio region in which an Al composition ratio increases monotonically with proximity to the second semiconductor layer,
a maximum impurity concentration position of an impurity of the second conductivity type in the electron barrier layer is located in the increasing Al composition ratio region,
an impurity concentration of the impurity of the second conductivity type at the maximum impurity concentration position is higher than an impurity concentration of the impurity of the second conductivity type at an edge of the increasing Al composition ratio region, the edge being closer to the second semiconductor layer,
a band-gap energy of the electron barrier layer is highest at least at an interface of the electron barrier layer closer to the second semiconductor layer, and
an impurity concentration of the impurity of the second conductivity type decreases from the maximum impurity concentration position toward the interface.
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