US 12,408,488 B2
Micro light-emitting diode device
Li-Yi Chen, Tainan (TW); and Hsin-Wei Lee, Tainan (TW)
Assigned to MIKRO MESA TECHNOLOGY CO., LTD., Apia (WS)
Filed by MIKRO MESA TECHNOLOGY CO., LTD., Apia (WS)
Filed on Mar. 13, 2023, as Appl. No. 18/182,390.
Prior Publication US 2024/0313154 A1, Sep. 19, 2024
Int. Cl. H10H 29/14 (2025.01); H10H 20/81 (2025.01); H10H 20/825 (2025.01); H10H 20/833 (2025.01); H10H 20/852 (2025.01); H10H 20/855 (2025.01)
CPC H10H 20/8215 (2025.01) [H10H 20/825 (2025.01); H10H 20/833 (2025.01); H10H 20/852 (2025.01); H10H 20/855 (2025.01); H10H 29/142 (2025.01)] 27 Claims
OG exemplary drawing
 
1. A micro light-emitting diode device, comprising:
a substrate having an anode electrode thereon;
a micro light-emitting diode having a lateral width smaller than 100 μm, disposed on and in contact with the anode electrode, and comprising:
a p-type III-nitride layer;
a first n-type III-nitride layer above the p-type III-nitride layer;
a second n-type III-nitride layer above and in contact with the first n-type III-nitride layer, wherein the second n-type III-nitride layer contains aluminum and has a top surface and a bottom surface respectively away from and adjacent to the first n-type III-nitride layer, a refractive index of the second n-type III-nitride layer is smaller than a refractive index of the first n-type III-nitride layer and varies in a monotonically non-decreasing manner from the top surface, and the refractive index of the second n-type III-nitride layer is larger at the bottom surface than at the top surface; and
an active layer between the p-type III-nitride layer and the first n-type III-nitride layer; and
a cathode transparent electrode at least partially in contact with the top surface of the second n-type III-nitride layer.