| CPC H10H 20/821 (2025.01) [H10H 20/8312 (2025.01); H10H 20/857 (2025.01); H10H 29/142 (2025.01)] | 18 Claims |
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1. A light emitting element assembly, comprising:
a light emitting element comprising an emission stacked pattern comprising a first semiconductor layer, an active layer, a second semiconductor layer, and an electrode layer that are sequentially stacked in a longitudinal direction of the emission stacked pattern,
an insulating layer on the light emitting element, a width of the insulating layer in the longitudinal direction of the emission stacked pattern is less than or equal to a thickness of the first semiconductor layer in the longitudinal direction of the emission stacked pattern,
wherein the active layer comprises a first surface that is in contact with the first semiconductor layer in the longitudinal direction of the emission stacked pattern, and a second surface that is opposite the first surface and is in contact with the second semiconductor layer,
wherein the first semiconductor layer comprises at least one n-type semiconductor layer, and the second semiconductor layer comprises at least one p-type semiconductor layer,
wherein the first surface of the active layer is located at a point corresponding to −20% to +20% of half of a total length of the emission stacked pattern in the longitudinal direction of the emission stacked pattern,
wherein the electrode layer is thicker than the second semiconductor layer in the longitudinal direction of the emission stacked pattern, and
wherein the electrode layer is thinner than the first semiconductor layer in the longitudinal direction of the emission stacked pattern.
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