US 12,408,484 B2
Light emitting element and method of manufacturing light emitting element
Hiroki Kondo, Anan (JP)
Assigned to NICHIA CORPORATION, Anan (JP)
Filed by NICHIA CORPORATION, Anan (JP)
Filed on Nov. 30, 2023, as Appl. No. 18/525,242.
Application 18/525,242 is a division of application No. 17/330,052, filed on May 25, 2021, granted, now 11,888,089.
Claims priority of application No. 2020-091976 (JP), filed on May 27, 2020; and application No. 2020-200405 (JP), filed on Dec. 2, 2020.
Prior Publication US 2024/0113253 A1, Apr. 4, 2024
Int. Cl. H01L 33/00 (2010.01); H10H 20/01 (2025.01); H10H 20/811 (2025.01); H10H 20/812 (2025.01); H10H 20/824 (2025.01); H10H 20/825 (2025.01)
CPC H10H 20/812 (2025.01) [H10H 20/01335 (2025.01); H10H 20/018 (2025.01); H10H 20/811 (2025.01); H10H 20/824 (2025.01); H10H 20/825 (2025.01)] 17 Claims
OG exemplary drawing
 
1. A method of manufacturing a light emitting element, the method comprising:
an n-side nitride semiconductor layer growing process in which an n-side nitride semiconductor layer is grown;
an active layer growing process in which an active layer comprising a plurality of nitride semiconductor well layers and a plurality of nitride semiconductor barrier layers is grown on the n-side nitride semiconductor layer, wherein the active layer is configured to emit ultraviolet light; and
a p-side nitride semiconductor layer growing process in which a p-side nitride semiconductor layer is grown on the active layer, wherein:
the active layer growing process comprises:
a first barrier layer growing process in which a first barrier layer is grown by using a source gas comprising an Al source gas, a Ga source gas, and an N source gas, wherein, in the first barrier layer growing process, a flow rate for the Al source gas is in a range of 0.5 sccm to 2 sccm, a flow rate for the Ga source gas is in a range of 20 sccm to 50 sccm, and a flow rate for the N source gas is in a range of 4 slm to 10 slm,
a second barrier layer growing process in which a second barrier layer is grown on the first barrier layer by using a source gas comprising an Al source gas, a Ga source gas, an In source gas, and an N source gas, wherein, in the second barrier layer growing process, a flow rate for the Al source gas is in a range of 0.5 sccm to 2 sccm, a flow rate for the Ga source gas is in a range of 20 sccm to 50 sccm, a flow rate for the N source gas is in a range of 4 slm to 10 slm, and a flow rate for the In source gas is in a range of 3 sccm to 15 sccm, and
a well layer growing process in which a well layer having a smaller band gap energy than the second barrier layer is grown on the second barrier layer by using a source gas comprising a Ga source gas and an N source gas.