US 12,408,481 B2
Light emitting diode (LED) devices with nucleation layer
Isaac Wildeson, San Jose, CA (US); Toni Lopez, Aachen (DE); Hee-Jin Kim, San Jose, CA (US); Robert Armitage, Cupertino, CA (US); and Parijat Deb, San Jose, CA (US)
Assigned to Lumileds LLC, San Jose, CA (US)
Filed by Lumileds LLC, San Jose, CA (US)
Filed on Jan. 7, 2022, as Appl. No. 17/570,605.
Application 17/570,605 is a continuation in part of application No. 16/721,386, filed on Dec. 19, 2019, granted, now 11,264,530.
Prior Publication US 2022/0131028 A1, Apr. 28, 2022
Int. Cl. H01L 33/00 (2010.01); H10H 20/01 (2025.01); H10H 20/819 (2025.01); H10H 20/825 (2025.01)
CPC H10H 20/01335 (2025.01) [H10H 20/819 (2025.01); H10H 20/825 (2025.01)] 21 Claims
OG exemplary drawing
 
1. A light emitting diode device comprising:
a nucleation layer on a substrate, the nucleation layer comprising a III-nitride material;
a patterned dielectric layer on a top surface of the nucleation layer, the patterned dielectric layer comprising a plurality of features and having a plurality of spaces between the plurality of features, wherein the plurality of features have a top surface and sidewalls, and wherein the plurality of spaces provide one or more exposed portions of the top surface of the nucleation layer;
a first III-nitride layer disposed within the plurality of spaces, the first III-nitride layer comprising a first III-nitride material, wherein the first III-nitride layer is on a bottom portion of the sidewalls of the plurality of features and on the one or more exposed portions of the top surface of the nucleation layer within the plurality of spaces, and wherein the first III-nitride layer is not on an upper portion of the sidewalls of the plurality of features;
a second III-nitride layer on the first III-nitride layer, the second III-nitride layer comprises a second III-nitride material;
a plurality of voids disposed between the upper portion of the sidewalls of the plurality of features having no first III-nitride layer thereon, the first III-nitride layer, and the second III-nitride layer;
an anode layer on the second III-nitride layer; and
a cathode layer in a cathode via.