US 12,408,478 B2
Method for manufacturing silicon photonic device and silicon photonic device thereof
Wei-Kang Liu, Taichung (TW); Chih-Tsung Shih, Hsinchu (TW); Hau-Yan Lu, Hsinchu (TW); and Yingkit Felix Tsui, Cupertino, CA (US)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on May 26, 2022, as Appl. No. 17/824,923.
Prior Publication US 2023/0387334 A1, Nov. 30, 2023
Int. Cl. H10F 77/40 (2025.01); G02B 6/42 (2006.01); H10F 71/00 (2025.01); H10F 77/00 (2025.01)
CPC H10F 77/413 (2025.01) [G02B 6/4214 (2013.01); H10F 71/00 (2025.01); H10F 77/953 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method for manufacturing an integrated circuit device, comprising:
(a) providing a photonic structure including an insulating structure and an optical coupler embedded in the insulating structure; and
(b) removing a portion of the insulating structure to expose a coupling surface of the optical coupler and form a light reflective structure corresponding to the coupling surface;
wherein (b) comprises:
(b1) removing a first portion of the insulating structure to expose the coupling surface of the optical coupler;
(b2) removing a second portion of the insulating structure to form a rib portion on the insulating structure; and
(b3) shaping the rib portion to form the light reflective structure.