US 12,408,475 B2
Interconnected electrode structure having multi-conductive through hole and method of manufacturing same
Jian Lin, Suzhou (CN); Hao Zhang, Suzhou (CN); Jing Wang, Suzhou (CN); Zhenguo Wang, Suzhou (CN); Qun Luo, Suzhou (CN); Chao Gong, Suzhou (CN); and Changqi Ma, Suzhou (CN)
Assigned to SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO) , CHINESE ACADEMY OF SCIENCES, Suzhou (CN)
Appl. No. 18/265,265
Filed by SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO) , CHINESE ACADEMY OF SCIENCES, Suzhou (CN)
PCT Filed Dec. 27, 2021, PCT No. PCT/CN2021/141621
§ 371(c)(1), (2) Date Jun. 5, 2023,
PCT Pub. No. WO2022/143519, PCT Pub. Date Jul. 7, 2022.
Claims priority of application No. 202011584404.1 (CN), filed on Dec. 28, 2020.
Prior Publication US 2024/0047589 A1, Feb. 8, 2024
Int. Cl. H10K 30/83 (2023.01); H10F 71/00 (2025.01); H10F 77/20 (2025.01)
CPC H10F 77/215 (2025.01) [H10F 71/138 (2025.01); H10F 77/244 (2025.01)] 13 Claims
OG exemplary drawing
 
1. An interconnected electrode structure, comprising:
an insulating base material, comprising a first surface and a second surface which face away from each other;
a through hole, penetrating through the insulating base material in a thickness direction;
a first conductive body, formed by conductive slurry that enters the through hole from an opening of the through hole on the first surface, wherein a bottom end of the first conductive body reaches any set position between two ends of the through hole; and
a second conductive body, formed by a second conductive material that enters the through hole from an opening of the through hole on the second surface, and also electrically combined with the first conductive body to form a conductive channel in the insulating base material, wherein a second conductive layer is formed on the second surface of the insulating base material, and the second conductive layer and the second conductive body are integrally formed, wherein a third conductive layer is arranged on the second surface of the insulating base material, and the third conductive layer is in electrical contact with the second conductive layer, wherein the third conductive layer is a transparent conductive layer, wherein the second conductive layer is arranged around the third conductive layer in a semi-enclosed form, the second conductive layer is arranged around the third conductive layer; the second conductive layer and the third conductive layer at least partially overlap, the second conductive layer is linear and has a line width less than or equal to 5 mm, an equivalent square resistance of the second conductive layer is less than or equal to 5 Ω/sq, a thickness of the second conductive layer is greater than a protrusion height of an edge portion of the opening of the through hole on the second surface of the insulating base material relative to the second surface, the second conductive layer covers the opening of the through hole on the second surface of the insulating base material and extends radially outward from the edge portion of the opening by 20 μm or more.