US 12,408,474 B2
Contacts of solar cells and other optoelectronic devices
Yong-Hang Zhang, Scottsdale, AZ (US); Xin Qi, Tempe, AZ (US); Zheng Ju, Tempe, AZ (US); Jia Ding, Tempe, AZ (US); Tyler McCarthy, Scottsdale, AZ (US); and Stephen Schaefer, Scottsdale, AZ (US)
Assigned to ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY, Scottsdale, AZ (US)
Filed by ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY, Scottsdale, AZ (US)
Filed on Jan. 6, 2023, as Appl. No. 18/151,341.
Claims priority of provisional application 63/297,111, filed on Jan. 6, 2022.
Prior Publication US 2023/0215961 A1, Jul. 6, 2023
Int. Cl. H10F 77/20 (2025.01); H10F 71/00 (2025.01)
CPC H10F 77/211 (2025.01) [H10F 71/00 (2025.01)] 19 Claims
OG exemplary drawing
 
1. An optoelectronic junction, comprising:
a thin-film doped semiconductor; and
a p-contact layer comprising a two-dimensional (2D) material deposited at an interface of the thin-film doped semiconductor forming the optoelectronic junction, a thickness of the two-dimensional (2D) material being chosen to tailor a Fermi level of the two-dimensional (2D) material to overlap or fall below a valence band edge of the thin-film doped semiconductor at the interface,
wherein the thin-film doped semiconductor comprises a p-type semiconductor,
wherein the p-contact layer comprising the two-dimensional (2D) material comprises a single-layer p-type material or a double-layer p-type material, and
wherein the optoelectronic junction is a p-p+ junction.