US 12,408,470 B2
Passivated contact structure and solar cell comprising the same, cell assembly, and photovoltaic system
Gang Chen, Yiwu (CN); Kaifu Qiu, Yiwu (CN); Yongqian Wang, Yiwu (CN); and Xinqiang Yang, Yiwu (CN)
Assigned to ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY CO., LTD., Jinhua (CN); ZHUHAI FUSHAN AIKO SOLAR ENERGY TECHNOLOGY CO., LTD., Zhuhai (CN); TIANJIN AIKO SOLAR ENERGY TECHNOLOGY CO., LTD., Tianjin (CN); and GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY CO., LTD., Foshan (CN)
Filed by ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY CO., LTD., Jinhua (CN); ZHUHAI FUSHAN AIKO SOLAR ENERGY TECHNOLOGY CO., LTD., Zhuhai (CN); TIANJIN AIKO SOLAR ENERGY TECHNOLOGY CO., LTD., Tianjin (CN); and GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY CO., LTD., Foshan (CN)
Filed on May 8, 2024, as Appl. No. 18/657,783.
Application 18/657,783 is a continuation of application No. 17/862,359, filed on Jul. 11, 2022.
Application 17/862,359 is a continuation in part of application No. 17/509,060, filed on Oct. 24, 2021, granted, now 11,489,080, issued on Nov. 1, 2022.
Claims priority of application No. 202110828475.X (CN), filed on Jul. 22, 2021; and application No. 202110828478.3 (CN), filed on Jul. 22, 2021.
Prior Publication US 2024/0290905 A1, Aug. 29, 2024
Int. Cl. H01L 31/18 (2006.01); H01L 31/05 (2014.01); H10F 19/90 (2025.01); H10F 71/00 (2025.01)
CPC H10F 71/129 (2025.01) [H10F 19/908 (2025.01)] 30 Claims
OG exemplary drawing
 
1. A solar cell, comprising:
a silicon substrate;
a first doped region and a second doped region; wherein,
the first doped region comprises:
a first passivated contact region disposed on the silicon substrate, and a second passivated contact region disposed on the first passivated contact region;
wherein:
the first passivated contact region comprises a first doped layer, a first passivation layer, and a second doped layer;
the second passivated contact region comprises a second passivation layer and a third doped layer;
the first doped layer, the first passivation layer, the second doped layer, the second passivation layer, and the third doped layer are disposed on the silicon substrate in sequence;
the second passivated contact region comprises an opening for connecting a conductive layer of the solar cell to the first passivated contact region;
the second doped region comprises a third passivation layer;
each of the first passivation layer and the third passivation layer includes a porous structure; and
one of the first doped region and the second doped region is a P-type doped region, the other of the first doped region and the second doped region is an N-type doped region, and a hole density of a corresponding passivation layer in the P-type doped region is greater than a hole density of a corresponding passivation layer in the N-type doped region.