US 12,408,464 B2
Semiconductor arrangement with isolation structure
Feng-Chien Hsieh, Pingtung (TW); Yun-Wei Cheng, Taipei (TW); Kuo-Cheng Lee, Tainan (TW); and Cheng-Ming Wu, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu (TW)
Filed on Aug. 9, 2023, as Appl. No. 18/232,085.
Application 18/232,085 is a continuation of application No. 17/458,720, filed on Aug. 27, 2021, granted, now 11,837,619.
Prior Publication US 2023/0387168 A1, Nov. 30, 2023
Int. Cl. H10F 39/00 (2025.01); H10F 39/18 (2025.01)
CPC H10F 39/807 (2025.01) [H10F 39/011 (2025.01); H10F 39/184 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor arrangement, comprising:
a first photodiode;
a second photodiode;
an isolation structure; and
a near-infrared pass filter overlying the second photodiode, wherein:
the isolation structure laterally surrounds the first photodiode to separate the first photodiode from the second photodiode,
the isolation structure comprises a first well and a shallow trench isolation at least partially surrounded by the first well,
the near-infrared pass filter allows merely wavelengths in a range of 750 nm and 2500 nm to pass through and be detected by the second photodiode,
the first photodiode has a first lateral cross-sectional diameter,
the second photodiode has a second lateral cross-sectional diameter different than the first lateral cross-sectional diameter,
the second photodiode extends to a first depth from a first side in a substrate, and
the first well extends to a second depth from the first side in the substrate greater than the first depth.