US 12,408,456 B2
Image sensor pixel and metal shielding of charge storage device of image sensor pixel formed by one step process
Cheng-Yen Li, Hsinchu (TW); Chia-Chan Chen, Zhubei (TW); and Meng-Chin Lee, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 23, 2023, as Appl. No. 18/213,320.
Application 18/213,320 is a division of application No. 17/382,571, filed on Jul. 22, 2021, granted, now 11,728,362.
Claims priority of provisional application 63/178,398, filed on Apr. 22, 2021.
Prior Publication US 2023/0335569 A1, Oct. 19, 2023
Int. Cl. H10F 39/00 (2025.01); H04N 25/531 (2023.01); H04N 25/79 (2023.01)
CPC H10F 39/8057 (2025.01) [H04N 25/79 (2023.01); H10F 39/024 (2025.01); H04N 25/531 (2023.01); H10F 39/8027 (2025.01); H10F 39/8037 (2025.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor pixel comprising:
a photosensitive device;
a charge storage device;
a charge transfer path that transfers electrical charge from the photosensitive device to the charge storage device;
a light blocking layer disposed over the charge storage device;
a light blocking plug disposed over the charge storage device; and
a dielectric layer disposed over the light blocking layer;
wherein the light blocking plug passes through the dielectric layer and contacts the light blocking layer, and also electrically contacts the charge storage device.