US 12,408,455 B2
Imaging element, stacked imaging element, and solid-state imaging apparatus
Taiichiro Watanabe, Kanagawa (JP); Fumihiko Koga, Kanagawa (JP); Kyosuke Ito, Kanagawa (JP); Hideaki Togashi, Kanagawa (JP); and Yusaku Sugimori, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Filed by Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Filed on Jun. 1, 2023, as Appl. No. 18/204,596.
Application 18/204,596 is a continuation of application No. 16/624,205, granted, now 11,670,659, previously published as PCT/JP2018/023598, filed on Jun. 21, 2018.
Claims priority of application No. 2017-121200 (JP), filed on Jun. 21, 2017; and application No. 2018-115847 (JP), filed on Jun. 19, 2018.
Prior Publication US 2023/0317750 A1, Oct. 5, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10F 39/00 (2025.01); H04N 25/77 (2023.01)
CPC H10F 39/8057 (2025.01) [H04N 25/77 (2023.01); H10F 39/8053 (2025.01)] 10 Claims
OG exemplary drawing
 
1. A light detecting element, comprising:
a photoelectric conversion unit comprising a first electrode, a photoelectric conversion layer, and a second electrode, wherein
the photoelectric conversion layer is disposed between the first electrode and the second electrode,
the photoelectric conversion unit further comprises a charge storage electrode arranged apart from the first electrode and arranged to face the photoelectric conversion layer through an insulating layer, and
an absolute value of a potential applied to a part of the photoelectric conversion layer facing the charge storage electrode is a value larger than an absolute value of a potential applied to a region of the photoelectric conversion layer positioned between the light detecting element and an adjacent light detecting element and an absolute value of a potential applied to a part of the photoelectric conversion layer facing a region between the first electrode and the charge storage electrode is a value larger than the absolute value of the potential applied to the region of the photoelectric conversion layer positioned between the light detecting element and the adjacent light detecting element.