US 12,408,454 B2
Solid-state imaging device and imaging apparatus
Katsuhiko Hanzawa, Kanagawa (JP); Shinichi Miyake, Kanagawa (JP); and Kazuyuki Tomida, Kanagawa (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Appl. No. 18/263,729
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Jan. 28, 2022, PCT No. PCT/JP2022/003257
§ 371(c)(1), (2) Date Aug. 1, 2023,
PCT Pub. No. WO2022/172777, PCT Pub. Date Aug. 18, 2022.
Claims priority of application No. 2021-020074 (JP), filed on Feb. 10, 2021.
Prior Publication US 2024/0120353 A1, Apr. 11, 2024
Int. Cl. H10F 39/00 (2025.01); H04N 25/47 (2023.01); H04N 25/779 (2023.01); H10D 30/01 (2025.01); H10D 84/01 (2025.01); H10D 84/83 (2025.01)
CPC H10F 39/80377 (2025.01) [H04N 25/47 (2023.01); H04N 25/779 (2023.01); H10D 30/021 (2025.01); H10D 84/0126 (2025.01); H10D 84/83 (2025.01); H10F 39/80373 (2025.01); H10F 39/809 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A solid-state imaging device comprising:
a photoelectric conversion device that performs photoelectric conversion of incident light;
a current-voltage conversion circuit including a first transistor that converts an amount of electric charge generated by the photoelectric conversion into a voltage signal; and
an output circuit that includes a second transistor having an S value smaller than an S value of the first transistor and generates an output signal based on the voltage signal.