US 12,408,452 B2
Solid-state image pickup apparatus and manufacturing method therefor, and electronic equipment
Tadayuki Kimura, Kanagawa (JP); and Takatoshi Kameshima, Kanagawa (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Appl. No. 17/435,090
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Jan. 30, 2020, PCT No. PCT/JP2020/003434
§ 371(c)(1), (2) Date Aug. 31, 2021,
PCT Pub. No. WO2020/183965, PCT Pub. Date Sep. 17, 2020.
Claims priority of application No. 2019-047653 (JP), filed on Mar. 14, 2019.
Prior Publication US 2022/0139975 A1, May 5, 2022
Int. Cl. H10F 39/00 (2025.01); H01L 21/02 (2006.01); H01L 21/3205 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 25/065 (2023.01); H01L 25/07 (2006.01); H01L 25/18 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01)
CPC H10F 39/802 (2025.01) [H10B 61/00 (2023.02); H10F 39/8053 (2025.01); H10F 39/806 (2025.01); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A solid-state image pickup apparatus, comprising:
a first structure that includes:
a first substrate; and
a pixel region that includes a plurality of pixels, wherein
the plurality of pixels is in the first substrate,
each pixel of the plurality of pixels is configured to:
generate an amount of an electric charge based on photoelectric conversion; and
output a pixel signal based on the generated amount of the electric charge, and
the plurality of pixels is in a two-dimensional grid arrangement; and
a second structure on the first structure, wherein the second structure includes:
a second substrate;
a logic circuit in the second substrate;
a non-volatile memory in the second substrate, wherein
the non-volatile memory includes a magneto-resistive random access memory, and
the magneto-resistive random access memory includes:
a magnetic tunnel junction element as a first storage element;
a selection transistor that includes a plurality of diffusion regions; and
a first electrode section configured to connect a diffusion region of the plurality of diffusion regions to the magnetic tunnel junction element:
a first protective film on an end surface of the first storage element, wherein
the end surface of the first storage element faces the first structure, and
the first protective film is configured to inhibit an entrance of hydrogen; and
a second protective film on a side surface of the first storage element, wherein the second protective film is configured to inhibit the entrance of the hydrogen.