US 12,408,451 B2
Semiconductor device, solid-state imaging device and electronic apparatus
Taku Umebayashi, Kanagawa (JP); Keiji Tatani, Kanagawa (JP); Hajime Inoue, Kanagawa (JP); and Ryuichi Kanamura, Kumamoto (JP)
Assigned to Sony Group Corporation, Tokyo (JP)
Filed by SONY GROUP CORPORATION, Tokyo (JP)
Filed on Nov. 27, 2023, as Appl. No. 18/520,273.
Application 18/520,273 is a continuation of application No. 17/719,554, filed on Apr. 13, 2022, granted, now 11,875,989.
Application 17/719,554 is a continuation of application No. 17/068,783, filed on Oct. 12, 2020, granted, now 11,374,049, issued on Jun. 28, 2022.
Application 17/068,783 is a continuation of application No. 16/555,067, filed on Aug. 29, 2019, granted, now 10,840,290, issued on Nov. 17, 2020.
Application 16/555,067 is a continuation of application No. 16/373,105, filed on Apr. 2, 2019, granted, now 10,475,845, issued on Nov. 12, 2019.
Application 16/373,105 is a continuation of application No. 16/042,094, filed on Jul. 23, 2018, granted, now 10,535,700, issued on Jan. 14, 2020.
Application 16/042,094 is a continuation of application No. 15/852,468, filed on Dec. 22, 2017, granted, now 10,128,301, issued on Nov. 13, 2018.
Application 15/852,468 is a continuation of application No. 15/403,154, filed on Jan. 10, 2017, granted, now 9,917,131, issued on Mar. 13, 2018.
Application 15/403,154 is a continuation of application No. 15/087,894, filed on Mar. 31, 2016, granted, now 9,570,499, issued on Feb. 14, 2017.
Application 15/087,894 is a continuation of application No. 14/434,288, granted, now 9,431,450, issued on Aug. 30, 2016, previously published as PCT/JP2013/006055, filed on Oct. 10, 2013.
Claims priority of application No. 2012-230805 (JP), filed on Oct. 18, 2012; and application No. 2013-089580 (JP), filed on Apr. 22, 2013.
Prior Publication US 2024/0096925 A1, Mar. 21, 2024
Int. Cl. H10F 39/18 (2025.01); H10F 39/00 (2025.01); H10F 39/12 (2025.01)
CPC H10F 39/182 (2025.01) [H10F 39/018 (2025.01); H10F 39/18 (2025.01); H10F 39/199 (2025.01); H10F 39/8037 (2025.01); H10F 39/8053 (2025.01); H10F 39/8057 (2025.01); H10F 39/8063 (2025.01); H10F 39/809 (2025.01); H10F 39/811 (2025.01)] 15 Claims
OG exemplary drawing
 
1. A light detecting device, comprising:
a first section including a first semiconductor layer and a first layer including a first electrode;
a second section including a second semiconductor layer, a second layer including a second electrode, and a third layer including a third electrode, wherein the second layer and the third layer are separated from another by the second semiconductor layer;
a third section including a third semiconductor layer and a fourth layer including a fourth electrode; and
a through electrode, wherein the through electrode is a unitary structure, wherein a first portion of the unitary structure of the through electrode extends into the second layer, wherein a second portion of the unitary structure of the through electrode extends through the second semiconductor layer, and wherein a third portion of the unitary structure of the through electrode extends into the third layer and terminates at an electrode disposed in the third layer,
wherein the first section, the second section, and the third section are stacked such that the first layer and the second layer face each other, and the third layer and the fourth layer face each other,
wherein the first electrode is directly bonded to the second electrode, and
wherein the third electrode is directly bonded to the fourth electrode.