| CPC H10F 39/18 (2025.01) [H10F 39/8067 (2025.01); H10F 39/807 (2025.01); H10F 39/811 (2025.01)] | 20 Claims |
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1. A CMOS image sensor comprising:
a substrate including a plurality of unit pixel regions, the substrate including:
a first surface configured to receive light;
a second surface opposite to the first surface;
a deep device isolation portion disposed in the substrate and configured to isolate the plurality of unit pixel regions from each other, wherein the deep device isolation portion extends from the first surface toward the second surface and has a first depth measured from the first surface;
a photoelectric conversion portion formed in the substrate in each of the plurality of unit pixel regions; and
a first vertical reflection structure disposed in each of the plurality of unit pixel regions of the substrate and surrounded by the deep device isolation portion in a plan view,
wherein the first vertical reflection structure extends from the first surface toward the second surface and has a second depth measured from the first surface,
wherein the second depth is equal to or greater than the first depth, and
wherein a bottommost surface of the first vertical reflection structure is higher than an uppermost portion of the photoelectric conversion portion with respect to the first surface.
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