US 12,408,449 B2
Photodiode device with improved dark current
Ewald Wachmann, Kainbach (AT)
Assigned to AMS-OSRAM AG, Premstaetten (AT)
Appl. No. 18/010,972
Filed by ams-Osram AG, Premstätten (AT)
PCT Filed Jun. 22, 2021, PCT No. PCT/EP2021/067002
§ 371(c)(1), (2) Date Dec. 16, 2022,
PCT Pub. No. WO2021/259932, PCT Pub. Date Dec. 30, 2021.
Claims priority of application No. 20182030 (EP), filed on Jun. 24, 2020.
Prior Publication US 2023/0230985 A1, Jul. 20, 2023
Int. Cl. H10F 71/00 (2025.01); H10F 30/221 (2025.01); H10F 39/00 (2025.01); H10F 39/10 (2025.01); H10F 77/20 (2025.01); H10F 39/18 (2025.01)
CPC H10F 39/107 (2025.01) [H10F 30/221 (2025.01); H10F 39/802 (2025.01); H10F 71/00 (2025.01); H10F 77/241 (2025.01); H10F 39/189 (2025.01)] 16 Claims
OG exemplary drawing
 
1. A photodiode device, comprising:
a semiconductor substrate with a main surface,
at least one doped well of a first type of electric conductivity at the main surface of the substrate, and
at least one doped region of a second type of electric conductivity arranged at the main surface of the substrate, the doped region being adjacent to the at least one doped well, wherein the second type of electric conductivity is opposite to the first type of electric conductivity, wherein
the at least one doped well and the at least one doped region are electrically contactable, and wherein
on a portion of an upper surface of the doped well a protection structure is arranged, where the upper surface is arranged at the main surface of the substrate, the protection structure protecting the doped well against defects at the upper surface and
in a top-view the extent of the protection structure is limited to the upper surface of the doped well.