US 12,408,448 B2
Deep trench isolation structure and methods for fabrication thereof
Bi-Shen Lee, Hsinchu (TW); Chia-Wei Hu, Kaohsiung (TW); Hai-Dang Trinh, Hsinchu (TW); Min-Ying Tsai, Kaohsiung (TW); Ching I Li, Tainan (TW); Hsun-Chung Kuang, Hsinchu (TW); and Cheng-Yuan Tsai, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jun. 13, 2022, as Appl. No. 17/838,994.
Prior Publication US 2023/0402487 A1, Dec. 14, 2023
Int. Cl. H10F 39/00 (2025.01); H10F 39/12 (2025.01); H10F 39/18 (2025.01)
CPC H10F 39/028 (2025.01) [H10F 39/024 (2025.01); H10F 39/182 (2025.01); H10F 39/199 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01); H10F 39/807 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a plurality of pixel elements in and on a front side of a semiconductor substrate;
forming deep isolation trenches from a backside of the semiconductor substrate, wherein the deep isolation trenches surround a plurality of doped regions corresponding to the plurality of pixel elements;
depositing a defect repairing layer on sidewalls of the deep isolation trenches, wherein the defect repairing layer comprises a metal hydroxide;
depositing a hole accumulation layer on the defect repairing layer, wherein the hole accumulation layer comprises a metal oxide;
over-oxidizing the hole accumulation layer to add interstitial oxygen to the hole accumulation layer;
filling the deep isolation trenches with a filling material;
forming a plurality of color filters; and
forming a plurality of micro lenses.