US 12,408,447 B2
Double photodiode electromagnetic radiation sensor device
Jacopo Frigerio, Milan (IT); Giovanni Isella, Milan (IT); Andrea Ballabio, Milan (IT); Andrea De Iacovo, Rome (IT); and Lorenzo Colace, Rome (IT)
Assigned to Politecnico di Milano, (IT)
Appl. No. 18/007,455
Filed by Politecnico di Milano, Milan (IT); and UNIVERSITÀ DEGLI STUDI ROMA TRE, Rome (IT)
PCT Filed Jul. 29, 2021, PCT No. PCT/IB2021/056910
§ 371(c)(1), (2) Date Jan. 30, 2023,
PCT Pub. No. WO2022/024025, PCT Pub. Date Feb. 3, 2022.
Claims priority of application No. 102020000018760 (IT), filed on Jul. 31, 2020.
Prior Publication US 2023/0352613 A1, Nov. 2, 2023
Int. Cl. H10F 30/24 (2025.01); H10F 30/221 (2025.01)
CPC H10F 30/24 (2025.01) [H10F 30/2212 (2025.01)] 15 Claims
OG exemplary drawing
 
1. A double photodiode electromagnetic radiation sensor device comprising:
a substrate with in a first semiconductor material defining a first face exposed to electromagnetic radiation (EMR) and a second face opposite the first face;
a first integrated photodiode comprising:
a first doped region included in the substrate extending to the second face and having a first type doping (n); and
a second doped region included in the substrate extending to the second face, separated from the first doped region by a portion of the substrate, the second doped region having a doping of a second type (p+);
a second integrated photodiode (PD2) comprising the first doped region, and further comprising:
a layer in a second semiconductor material placed on the second face in contact with the first doped region and such as to define a third face opposed to the second face; and
a doped layer in the second semiconductor material having a doping of the second type (p+) and overlapping the third face; and
a plurality of metal contacts (BC, TC) arranged to contact the second doped region, at the second face, and the doped layer.