US 12,408,446 B2
Photoelectric conversion device, photoelectric conversion system, and equipment
Hiroshi Sekine, Kanagawa (JP); Kazuhiro Morimoto, Kanagawa (JP); Junji Iwata, Tokyo (JP); Aymantarek Abdelghafar, Tokyo (JP); and Hiroyuki Tsuchiya, Tokyo (JP)
Assigned to Canon Kabushiki Kaisha, Tokyo (JP)
Filed by CANON KABUSHIKI KAISHA, Tokyo (JP)
Filed on Dec. 28, 2022, as Appl. No. 18/147,079.
Claims priority of application No. 2022-000023 (JP), filed on Jan. 1, 2022.
Prior Publication US 2023/0215884 A1, Jul. 6, 2023
Int. Cl. H10F 30/225 (2025.01); H10F 39/00 (2025.01); H10F 39/12 (2025.01)
CPC H10F 30/225 (2025.01) [H10F 39/199 (2025.01); H10F 39/8033 (2025.01); H10F 39/807 (2025.01); H10F 39/809 (2025.01); H10F 39/811 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A photoelectric conversion device, comprising:
a first avalanche photodiode and a second avalanche photodiode that each have a first semiconductor region of a first conducting type in which a carrier of a same conducting type as a signal charge is a majority carrier;
an isolation portion that is disposed between the first avalanche photodiode and the second avalanche photodiode, and that includes a second semiconductor region of a second conducting type that is a conducting type that is different from the first conducting type; and
a connecting portion that electrically connects a contact plug of anode wiring and the second semiconductor region of the isolation portion to each other, wherein
the connecting portion includes
a third semiconductor region of the second conducting type that is connected to the contact plug of the anode wiring, and
a fourth semiconductor region of the second conducting type that is disposed between the third semiconductor region and the second semiconductor region,
an impurity concentration of the third semiconductor region is higher than the impurity concentration of the second semiconductor region,
the impurity concentration of the fourth semiconductor region is lower than the impurity concentration of the third semiconductor region, and
with respect to a first direction that is a direction in which the first avalanche photodiode and the second avalanche photodiode are arrayed, a width of the isolation portion is smaller than a width of the connecting portion.