US 12,408,445 B2
Detection substrate and manufacturing method therefor, and ray detection apparatus
Fanli Meng, Beijing (CN); Jiangbo Chen, Beijing (CN); and Zeyuan Li, Beijing (CN)
Assigned to BOE Technology Group Co., Ltd., Beijing (CN)
Appl. No. 17/921,605
Filed by BOE Technology Group Co., Ltd., Beijing (CN)
PCT Filed May 24, 2021, PCT No. PCT/CN2021/095617
§ 371(c)(1), (2) Date Oct. 26, 2022,
PCT Pub. No. WO2021/254102, PCT Pub. Date Dec. 23, 2021.
Claims priority of application No. 202010542079.6 (CN), filed on Jun. 15, 2020.
Prior Publication US 2023/0178675 A1, Jun. 8, 2023
Int. Cl. H10F 30/225 (2025.01); H10F 39/10 (2025.01)
CPC H10F 30/225 (2025.01) [H10F 39/107 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A detection substrate, comprising:
a driving back plate, comprising a plurality of detection regions, and each detection region comprises a thin-film transistor located on a base substrate, and a first bonding electrode located on the thin-film transistor and is electrically connected to a source electrode of the thin-film transistor; and
a plurality of avalanche photodiodes, wherein the plurality of avalanche photodiodes are arranged in the plurality of detection regions one by one, and a second bonding electrode fixedly connected to the first bonding electrode is arranged on a side of each avalanche photodiode facing the driving back plate;
wherein the first bonding electrode and the second bonding electrode constitute a central electrode, and an annular electrode is arranged on a side of each avalanche photodiode facing away from the driving back plate.