US 12,408,442 B2
Semiconductor device layout
Jhon Jhy Liaw, Hsinchu County (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Oct. 10, 2023, as Appl. No. 18/483,766.
Application 16/721,197 is a division of application No. 15/718,696, filed on Sep. 28, 2017, granted, now 10,522,528, issued on Dec. 31, 2019.
Application 18/483,766 is a continuation of application No. 17/373,302, filed on Jul. 12, 2021, granted, now 11,784,180.
Application 17/373,302 is a continuation of application No. 16/721,197, filed on Dec. 19, 2019, granted, now 11,063,032, issued on Jul. 13, 2021.
Prior Publication US 2024/0047452 A1, Feb. 8, 2024
Int. Cl. H10D 64/00 (2025.01); H01L 21/762 (2006.01); H10D 30/62 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01); H10D 89/10 (2025.01); H01L 21/3105 (2006.01); H10D 30/69 (2025.01); H10D 62/13 (2025.01); H10D 62/822 (2025.01); H10D 62/834 (2025.01); H10D 64/62 (2025.01); H10D 64/66 (2025.01); H10D 64/68 (2025.01)
CPC H10D 89/10 (2025.01) [H01L 21/76224 (2013.01); H10D 30/6219 (2025.01); H10D 62/114 (2025.01); H10D 62/115 (2025.01); H10D 64/017 (2025.01); H10D 84/0167 (2025.01); H10D 84/0172 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/853 (2025.01); H10D 84/856 (2025.01); H10D 84/859 (2025.01); H01L 21/31053 (2013.01); H10D 30/797 (2025.01); H10D 62/151 (2025.01); H10D 62/822 (2025.01); H10D 62/834 (2025.01); H10D 64/62 (2025.01); H10D 64/665 (2025.01); H10D 64/667 (2025.01); H10D 64/691 (2025.01); H10D 84/0188 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a first device comprising:
a first plurality of fins extending in parallel along a first direction and comprising a first channel region and a first source/drain region,
a first gate structure wrapping over each of the first plurality of fins, and
a first source/drain contact disposed over the first source/drain region; and
a second device comprising:
a first fin extending lengthwise along the first direction and aligned with one of the first plurality of fins along the first direction, the first fin comprising a second channel region and a second source/drain region,
a second gate structure wrapping over the first fin, and
a second source/drain contact disposed over the second source/drain region,
wherein the first source/drain contact comprises a first length along a second direction perpendicular to the first direction,
wherein the second source/drain contact comprises a second length along the second direction, and
wherein a ratio of the first length to the second length is between about 1.1 and about 2.0.