US 12,408,441 B2
Methods of manufacturing semiconductor devices
Seonghyun Yoo, Seoul (KR); and Yeonga Kim, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Nov. 14, 2022, as Appl. No. 18/055,357.
Claims priority of application No. 10-2021-0158391 (KR), filed on Nov. 17, 2021.
Prior Publication US 2023/0154797 A1, May 18, 2023
Int. Cl. H10D 89/00 (2025.01); H01L 21/02 (2006.01); H01L 23/00 (2006.01)
CPC H10D 89/011 (2025.01) [H01L 21/02348 (2013.01); H01L 24/02 (2013.01); H01L 2224/0231 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
forming a light blocking film configured to block first light within a first wavelength band on an edge region of an upper surface of a light-transmitting carrier substrate;
forming a photosensitive adhesive layer on the upper surface of the light-transmitting carrier substrate to at least partially cover the light blocking film;
bonding a product substrate to the upper surface of the light-transmitting carrier substrate using the photosensitive adhesive layer;
partially curing the photosensitive adhesive layer by irradiating the first light through the light-transmitting carrier substrate, wherein a portion of the photosensitive adhesive layer overlapping the light blocking film is not cured;
processing the product substrate to form a plurality of semiconductor devices, after the partially curing of the photosensitive adhesive layer; and
cutting the product substrate such that the plurality of semiconductor devices are cut into a plurality of separate individual semiconductor devices.
 
15. A method of manufacturing a semiconductor device, comprising:
forming a light blocking film configured to block first light within a first wavelength band on an edge region of an upper surface of a light-transmitting carrier substrate, the light blocking film having a first width;
forming a photosensitive adhesive layer curable by the first light on the upper surface of the light-transmitting carrier substrate to at least partially cover the light blocking film;
bonding a product substrate to the upper surface of the light-transmitting carrier substrate using the photosensitive adhesive layer;
partially curing the photosensitive adhesive layer by irradiating the first light through the light-transmitting carrier substrate, wherein a portion of the photosensitive adhesive layer overlapping the light blocking film is not cured and adheres to the product substrate;
processing the product substrate to form a plurality of semiconductor devices, after the partially curing of the photosensitive adhesive layer, wherein the product substrate has a dummy region surrounding the plurality of semiconductor devices, the dummy region having a second width that is equal to or wider than the first width; and
cutting the plurality of semiconductor devices together with the product substrate, wherein the portion of the photosensitive adhesive layer overlapping the light blocking film is removed by the cutting.
 
19. A method of manufacturing a semiconductor device, comprising:
forming a light blocking film configured to block first light within a first wavelength band on an edge region of an upper surface of a light-transmitting carrier substrate;
forming a photosensitive adhesive layer on the upper surface of the light-transmitting carrier substrate to at least partially cover the light blocking film;
bonding a product substrate to the upper surface of the light-transmitting carrier substrate using the photosensitive adhesive layer;
partially curing the photosensitive adhesive layer by irradiating the first light through the light-transmitting carrier substrate, wherein a portion of the photosensitive adhesive layer overlapping the light blocking film is not cured, but adheres to the product substrate;
processing the product substrate to form a plurality of semiconductor devices, after the partially curing of the photosensitive adhesive layer;
attaching adhesive tape to an upper surface of the product substrate on which the plurality of semiconductor devices are formed;
curing the portion of the photosensitive adhesive layer overlapping the light blocking film by irradiating second light having a second wavelength that is outside the first wavelength band through the light blocking film; and
detaching the product substrate from the light-transmitting carrier substrate.