| CPC H10D 86/60 (2025.01) [H10D 86/441 (2025.01); G09G 3/3291 (2013.01); G09G 2300/0426 (2013.01); H10K 59/131 (2023.02)] | 29 Claims |
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1. A display device, comprising:
a first transistor including:
a first channel of a first active pattern including a silicon semiconductor; and
a first gate electrode overlapping the first channel of the first active pattern;
a second transistor including:
a second channel of the first active pattern; and
a second gate electrode overlapping the second channel of the first active pattern and extending in a first direction;
a third transistor including:
a third gate electrode extending in the first direction;
a first channel of a second active pattern including an oxide semiconductor and extending in a second direction perpendicular to the first direction; and
a first upper electrode overlapping the first channel of the second active pattern and electrically connected to the third gate electrode of the third transistor;
a fourth transistor including:
a fourth gate electrode extending in the first direction;
a second channel of the second active pattern; and
a second upper electrode overlapping the second channel of the second active pattern and electrically connected to the fourth gate electrode of the fourth gate electrode of the fourth transistor; and
a conductive pattern including:
a connection pattern electrically connecting the first gate electrode of the first transistor to the second active pattern, contacting a region between the first channel and the second channel of the second active pattern, and including a portion extending in a third direction crossing both the first direction and the second direction.
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