| CPC H10D 84/834 (2025.01) [H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 84/0151 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01)] | 19 Claims |
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1. A method for manufacturing a semiconductor device, comprising:
forming preliminary mask patterns on a substrate including first regions and a second region between the first regions, each of the preliminary mask patterns extending in a first direction that is parallel to an upper surface of the substrate, the preliminary mask patterns regularly arranged and spaced apart from each other in a second direction that is parallel to the upper surface of the substrate and perpendicular to the first direction;
removing the preliminary mask pattern positioned at a first portion among the preliminary mask patterns formed in the second region to form mask patterns;
etching the substrate using the mask patterns as an etch mask to form first active patterns protruding from the substrate in the first region, second active patterns protruding from the substrate in the second region, and a second gap at the first portion in the second region;
forming a first isolation pattern in gaps between the first active patterns and gaps between the second active patterns; and
forming an upper etching mask on the mask patterns and the first isolation pattern to cover an entirety of the first region and the first portion in the second region;
selectively etching the second active patterns and the first isolation pattern positioned at a second portion excluding the first portion in the second region using the upper etching mask as an etch mask to form a trench at the substrate in the second region,
wherein the trench includes first trenches at first and second edges in the second direction of the second region and a protrusion between the first trenches, and a bottom of the first trenches is deeper than a bottom of the second gap.
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