| CPC H10D 84/811 (2025.01) [H01L 21/26513 (2013.01); H10D 1/47 (2025.01); H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 64/017 (2025.01)] | 20 Claims |
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1. A method, comprising:
forming a singular semiconductor fin protruding from a substrate;
forming a first resistor in the singular semiconductor fin, comprising:
implanting the singular semiconductor fin to form a first conductive channel in the singular semiconductor fin;
forming a first epitaxial region and a second epitaxial region in the singular semiconductor fin, wherein the first conductive channel is between the first epitaxial region and the second epitaxial region, wherein the first epitaxial region and the second epitaxial region have a same doping type as the first conductive channel; and
forming a first gate stack over the first conductive channel; and
forming a transistor in the singular semiconductor fin, comprising:
implanting the singular semiconductor fin to form a second conductive channel in the singular semiconductor fin, the second conductive channel having an opposite doping type as the first conductive channel;
forming a third epitaxial region in the singular semiconductor fin; and
forming a second gate stack over the second conductive channel in the singular semiconductor fin, wherein the second gate stack is between the second epitaxial region and the third epitaxial region.
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