US 12,408,417 B2
Forksheet semiconductor structure including at least one bipolar junction transistor and method
Arkadiusz Malinowski, Dresden (DE); and Alexander M. Derrickson, Saratoga Springs, NY (US)
Assigned to GlobalFoundries U.S. Inc., Malta, NY (US)
Filed by GlobalFoundries U.S. Inc., Malta, NY (US)
Filed on Jun. 21, 2022, as Appl. No. 17/807,899.
Claims priority of provisional application 63/314,797, filed on Feb. 28, 2022.
Prior Publication US 2023/0275083 A1, Aug. 31, 2023
Int. Cl. H10D 84/40 (2025.01); H01L 21/02 (2006.01); H10D 10/01 (2025.01); H10D 10/60 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01)
CPC H10D 84/401 (2025.01) [H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H10D 10/061 (2025.01); H10D 10/60 (2025.01); H10D 30/014 (2025.01); H10D 30/031 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 84/0109 (2025.01); H10D 84/038 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a dielectric body having a first sidewall and a second sidewall opposite the first sidewall;
a first transistor comprising a first semiconductor nanosheet positioned laterally immediately adjacent to the first sidewall; and
a second transistor comprising a second semiconductor nanosheet positioned laterally immediately adjacent to the second sidewall, wherein at least the first transistor comprises a bipolar junction transistor,
wherein the first semiconductor nanosheet further has a first bottom surface, a first top surface opposite the first bottom surface, a first proximal side immediately adjacent to the first sidewall of the dielectric body, and a first distal side opposite the first proximal side, and
wherein the first transistor comprises a base region comprising:
the first semiconductor nanosheet; and
a base semiconductor layer adjacent to the first bottom surface, the first distal side, and the first top surface.