US 12,408,414 B2
Transistor and memory circuitry comprising strings of memory cells
Daniel Billingsley, Meridian, ID (US); Jordan D. Greenlee, Boise, ID (US); Yongjun Jeff Hu, Boise, ID (US); Rita J. Klein, Boise, ID (US); and Everett A. McTeer, Eagle, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jul. 14, 2021, as Appl. No. 17/375,602.
Prior Publication US 2023/0016742 A1, Jan. 19, 2023
Int. Cl. H10D 64/68 (2025.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01); H10D 30/68 (2025.01); H10D 30/69 (2025.01)
CPC H10D 64/691 (2025.01) [H10B 41/27 (2023.02); H10B 43/27 (2023.02); H10D 30/681 (2025.01); H10D 30/69 (2025.01)] 20 Claims
OG exemplary drawing
 
1. Memory circuitry comprising strings of memory cells, comprising:
a vertical stack comprising alternating insulative tiers and conductive tiers, channel-material strings extending through the insulative tiers and the conductive tiers;
a charge-passage material in the conductive tiers laterally-outward of the channel-material strings;
a storage material in the conductive tiers laterally-outward of the charge-passage material, the storage material extending an entirety of a vertical height of each of the conductive tiers;
a metal oxide consisting of at least one of AlOq, ZrOq, and HfOq in the conductive tiers laterally-outward of the storage material, the metal oxide having upper and lower surfaces in direct physical contact with an insulative material of the insulative tiers;
MoMz in the conductive tiers laterally-outward of the at least one of AlOq, ZrOq, and HfOq, where “M” is at least one of Tc, Bh, Fe, Os, and Hs; “z” being greater than 0 and less than 1.0;
a metal material in the conductive tiers laterally-outward of the MoMz; and
memory cells in individual of the conductive tiers, the memory cells individually comprising:
a channel material of individual of the channel-material strings;
the storage material;
the metal oxide;
the MoMz; and
the metal material.