US 12,408,410 B2
Silicon carbide device with stripe-shaped gate electrode and source metallization
Ralf Siemieniec, Villach (AT); and Dethard Peters, Hoechstadt (DE)
Assigned to INFINEON TECHNOLOGIES AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Sep. 13, 2021, as Appl. No. 17/473,917.
Claims priority of application No. 20197223 (EP), filed on Sep. 21, 2020.
Prior Publication US 2022/0093761 A1, Mar. 24, 2022
Int. Cl. H10D 64/27 (2025.01); H01L 23/482 (2006.01); H10D 30/66 (2025.01); H10D 62/10 (2025.01); H10D 62/832 (2025.01); H10D 64/00 (2025.01); H10D 64/23 (2025.01)
CPC H10D 64/519 (2025.01) [H01L 23/4824 (2013.01); H10D 30/665 (2025.01); H10D 30/668 (2025.01); H10D 62/107 (2025.01); H10D 62/8325 (2025.01); H10D 64/111 (2025.01); H10D 64/252 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A silicon carbide device, comprising:
a silicon carbide body comprising a central region and a peripheral region surrounding the central region, wherein:
the central region comprises a source region of a first conductivity type; and
the peripheral region comprises a doped region of a second conductivity type;
a gate structure extending through the central region and into the peripheral region; and
a contiguous source metallization on the central region and on an inner portion of the peripheral region, wherein:
the contiguous source metallization and the source region form a first ohmic contact in the central region;
the contiguous source metallization and the doped region form a second ohmic contact in the peripheral region; and
the source region in the central region is in direct contact, along a horizontal direction, with a doped termination region of the doped region of the peripheral region, and the contiguous source metallization is in direct contact, along a vertical direction, with both the source region and the doped termination region of the doped region of the peripheral region.