| CPC H10D 64/258 (2025.01) [H01L 23/5226 (2013.01); H10D 89/811 (2025.01); H10D 30/603 (2025.01)] | 14 Claims |
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1. An electrostatic discharge (ESD) protection device, comprising:
a semiconductor substrate;
a first gate structure and a second gate structure, wherein the first gate structure and the second gate structure are disposed on the semiconductor substrate;
a first source doped region, a second source doped region, and a drain doped region, wherein the first source doped region, the second source doped region, and the drain doped region are disposed in the semiconductor substrate, the first source doped region and the drain doped region are located at two opposite sides of the first gate structure in a first direction, respectively, and the second source doped region and the drain doped region are located at two opposite sides of the second gate structure in the first direction, respectively;
first source silicide patterns disposed on the first source doped region, wherein the first source silicide patterns are arranged in a second direction and separated from one another;
second source silicide patterns disposed on the second source doped region, wherein the second source silicide patterns are arranged in the second direction and separated from one another;
drain silicide patterns disposed on the drain doped region, wherein the drain silicide patterns are arranged in the second direction and separated from one another, the first source silicide patterns and the drain silicide patterns are arranged misaligned with one another in the first direction, and the second source silicide patterns and the drain silicide patterns are arranged misaligned with one another in the first direction;
a silicide block pattern disposed on the semiconductor substrate, wherein the first source silicide patterns are separated from one another by the silicide block pattern, the drain silicide patterns are separated from one another by the silicide block pattern, and in a top view diagram of the ESD protection device, each of the first source silicide patterns and each of the drain silicide patterns are surrounded by the silicide block pattern; and
first source contacts disposed on the first source silicide patterns and separated from one another, wherein at least four of the first source contacts are disposed on and directly contact one of the first source silicide patterns, an amount of the drain silicide patterns surrounded by the silicide block pattern is greater than an amount of the first source silicide patterns surrounded by the silicide block pattern, and the at least four first source contacts are arranged in an array configuration with multiple columns and multiple rows in the top view diagram of the ESD protection device,
wherein two of the first source silicide patterns located adjacent to each other are separated by a first gap, and one of the drain silicide patterns overlaps the two of the first source silicide patterns located adjacent to each other and the first gap when viewed in the first direction,
wherein two of the second source silicide patterns located adjacent to each other are separated by a second gap, and the one of the drain silicide patterns overlaps the two of the second source silicide patterns located adjacent to each other and the second gap when viewed in the first direction.
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