US 12,408,404 B2
Method for manufacturing semiconductor device, semiconductor device, inverter circuit, driving device, vehicle, and elevator
Tatsuo Shimizu, Shinagawa (JP)
Assigned to KABUSHIKI KAISHA TOSHIBA, Tokyo (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP)
Filed on Aug. 29, 2022, as Appl. No. 17/822,970.
Claims priority of application No. 2022-041805 (JP), filed on Mar. 16, 2022.
Prior Publication US 2023/0299152 A1, Sep. 21, 2023
Int. Cl. H10D 64/01 (2025.01); H01L 21/04 (2006.01); H10D 12/01 (2025.01); H10D 62/832 (2025.01); H10D 64/62 (2025.01); H10D 30/66 (2025.01); H10D 62/834 (2025.01)
CPC H10D 64/01 (2025.01) [H01L 21/0485 (2013.01); H10D 12/031 (2025.01); H10D 62/8325 (2025.01); H10D 64/62 (2025.01); H01L 21/0465 (2013.01); H10D 30/66 (2025.01); H10D 62/834 (2025.01)] 17 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device, the method comprising:
performing first ion implantation of ion-implanting a p-type impurity into a silicon carbide layer in a first projected range and by a first dose amount;
performing second ion implantation of ion-implanting carbon (C) into the silicon carbide layer in a second projected range and by a second dose amount;
performing a first heat treatment activating the p-type impurity;
performing a first oxidation treatment oxidizing the silicon carbide layer;
performing an etching treatment etching the silicon carbide layer in an atmosphere containing hydrogen gas;
forming a first metal film on the silicon carbide layer, the first metal film containing at least one metal element selected from a group consisting of nickel (Ni), palladium (Pd), platinum (Pt), and chromium (Cr);
performing a second heat treatment causing the silicon carbide layer to react with the first metal film to form a metal silicide layer containing the at least one metal element; and
forming a second metal film on the silicon carbide layer, the second metal film having a chemical composition different from a chemical composition of the first metal film.