US 12,408,402 B2
GaN-based semiconductor structures
Kai Cheng, Jiangsu (CN)
Assigned to ENKRIS SEMICONDUCTOR, INC., Jiangsu (CN)
Filed by ENKRIS SEMICONDUCTOR, INC., Jiangsu (CN)
Filed on Jun. 15, 2022, as Appl. No. 17/840,995.
Claims priority of application No. 202122239416.7 (CN), filed on Sep. 15, 2021.
Prior Publication US 2023/0077826 A1, Mar. 16, 2023
Int. Cl. H10D 62/85 (2025.01); H01L 21/02 (2006.01); H10D 30/01 (2025.01); H10D 62/824 (2025.01)
CPC H10D 62/8503 (2025.01) [H01L 21/0254 (2013.01); H10D 30/015 (2025.01); H10D 62/824 (2025.01)] 17 Claims
OG exemplary drawing
 
1. A GaN-based semiconductor structure, comprising:
a substrate;
a channel layer;
a barrier layer, wherein the channel layer and the barrier layer are sequentially stacked on the substrate from bottom to up, and the channel layer and the barrier layer each include a gate region, a source region and a drain region located on both sides of the gate region;
a source region N-type ion heavily-doped layer located in the source region;
a drain region N-type ion heavily-doped layer located in the drain region, wherein a part of at least one of the source region N-type ion heavily-doped layer or the drain region N-type ion heavily-doped layer extends into the barrier layer and a part of the channel layer in a thickness direction;
a gate electrode located in the gate region of the barrier layer;
a source electrode located on the source region N-type ion heavily-doped layer; and
a drain electrode located on the drain region N-type ion heavily-doped layer;
wherein the GaN-based semiconductor structure has one of following structures:
the source region has one or more first holes, the drain region has a first groove, the first groove extends into the barrier layer and the part of the channel layer in the thickness direction, and the first groove is filled with the drain region N-type ion heavily-doped layer;
the drain region has one or more second holes, the source region has a second groove, the second groove extends into the barrier layer and the part of the channel layer in the thickness direction, and the second groove is filled with the source region N-type ion heavily-doped layer; or
one or more first holes are located in the source region, one or more second holes are located in the drain region, both the one or more first holes and the one or more second holes have cross sections, and the cross sections are surfaces parallel to a plane where the substrate is located; the one or more first holes and the one or more second holes have equal or unequal cross-sectional areas.