US 12,408,394 B2
Semiconductor device structure and method for forming the same
Sheng-Tsung Wang, Hsinchu (TW); Lin-Yu Huang, Hsinchu (TW); Min-Hsuan Lu, Hsinchu (TW); Chia-Hung Chu, Taipei (TW); and Shuen-Shin Liang, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 28, 2022, as Appl. No. 17/815,854.
Prior Publication US 2024/0038839 A1, Feb. 1, 2024
Int. Cl. H10D 62/10 (2025.01); H01L 21/285 (2006.01); H01L 21/311 (2006.01); H10D 30/67 (2025.01)
CPC H10D 62/118 (2025.01) [H01L 21/28518 (2013.01); H01L 21/31111 (2013.01); H10D 30/6735 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor device structure, comprising:
forming nanostructures over a front side of a substrate;
forming a gate structure surrounding the nanostructures;
forming a source/drain structure beside the gate structure;
forming a trench though the substrate from a back side of the substrate;
forming a first silicide layer in contact with the source/drain structure;
forming a second silicide layer over the first silicide layer and sidewalls of the trench;
depositing a first conductive material over the second silicide layer;
etching back the first conductive material;
etching back the second silicide layer; and
depositing a second conductive material in the trench.