US 12,408,393 B2
Semiconductor device with a single diffusion break structure and a gate structure having aligned sidewalls
Chien-Heng Liu, Pingtung County (TW); Chia-Wei Huang, Kaohsiung (TW); Hsin-Jen Yu, Tainan (TW); Yung-Feng Cheng, Kaohsiung (TW); and Ming-Jui Chen, Hsinchu (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Jun. 7, 2023, as Appl. No. 18/206,618.
Application 18/206,618 is a continuation of application No. 17/118,630, filed on Dec. 11, 2020, granted, now 11,715,759.
Claims priority of application No. 202011276918.0 (CN), filed on Nov. 16, 2020.
Prior Publication US 2023/0317779 A1, Oct. 5, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10D 62/10 (2025.01); H01L 21/762 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01)
CPC H10D 62/115 (2025.01) [H01L 21/76224 (2013.01); H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 30/6211 (2025.01)] 8 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a fin-shaped structure extending along a first direction on a substrate;
a first single diffusion break (SDB) structure extending along a second direction on one side of the fin-shaped structure, wherein the first SDB structure comprises a first side contacting the fin-shaped structure and a second side not contacting any fin-shaped structure;
a second SDB structure extending along the second direction on another side of the fin-shaped structure; and
a first gate structure extending along the second direction on one side of the fin-shaped structure, wherein the first SDB structure is adjacent to the first gate structure and not directly under the first gate structure and sidewalls of the first gate structure and the first SDB structure are aligned.