	US 12,408,387 B2
	Transistor with a negative capacitance and a method of creating the same
Feng Yuan, Hsinchu (TW); Ming-Shiang Lin, Hsinchu (TW); Chia-Cheng Ho, Hsinchu (TW); Jin Cai, Hsinchu (TW); Tzu-Chung Wang, Hsinchu (TW); and Tung Ying Lee, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 9, 2022, as Appl. No. 17/836,852.
Application 17/836,852 is a continuation of application No. 16/874,526, filed on May 14, 2020, granted, now 11,387,360.
Application 16/874,526 is a continuation of application No. 16/255,334, filed on Jan. 23, 2019, granted, now 10,707,347, issued on Jul. 7, 2020.
Claims priority of provisional application 62/748,789, filed on Oct. 22, 2018.
Prior Publication US 2022/0302315 A1, Sep. 22, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H10D 30/69 (2025.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 64/68 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01)

CPC H10D 30/701 (2025.01) [H10D 30/024 (2025.01); H10D 30/0415 (2025.01); H10D 30/6211 (2025.01); H10D 64/689 (2025.01); H10D 84/0144 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01)]

20 Claims

1. A method, comprising:

forming a first fin on a substrate, the first fin including a channel region having a first width;

forming a second fin on the substrate, the second fin including a channel region having a second width larger than the first width;

forming first and second spacers on the first fin;

forming third and fourth spacers on the second fin;

forming a gate dielectric layer on at least three sides of the first fin and on at least three sides of the second fin;

forming a ferroelectric layer having a first thickness on the gate dielectric layer;

annealing the ferroelectric layer;

thinning a portion of the ferroelectric layer that is on the first fin to a second thickness smaller than the first thickness; and

removing a portion of the ferroelectric layer that is on the second fin.