| CPC H10D 30/6757 (2025.01) [H10D 30/673 (2025.01); H10D 30/6755 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10K 59/1213 (2023.02)] | 30 Claims |

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30. An electronic device, comprising:
at least one thin film transistor, the at least one thin film transistor including:
a first electrode on a substrate, the first electrode having a first surface;
a first insulation film on the first surface of the first electrode;
a hole extending through the first insulation film and exposing the first surface of the first electrode;
an active layer on the first insulation film and on the hole, the active layer contacting the first surface of the first electrode at the hole;
a second insulation film on the active layer;
a gate electrode on the second insulation film;
a second electrode on the active layer, the second electrode extending through the second insulation film to electrically connect to the active layer; and
a third electrode on the active layer, the third electrode spaced apart from and opposite the second electrode, the third electrode extending through the second insulation film to electrically connect to the active layer, and
a third insulation film on the gate electrode,
wherein the second electrode and the third electrode are on the third insulation film,
wherein the second electrode extends through the third insulation film and the second insulation film to electrically connect to the active layer, and
wherein the third electrode extends through the third insulation film and the second insulation film to electrically connect to the active layer.
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