| CPC H10D 30/6755 (2025.01) [H01L 21/76843 (2013.01); H01L 21/76856 (2013.01); H10B 12/312 (2023.02); H10D 30/6713 (2025.01); H10D 30/6729 (2025.01); H10D 30/6734 (2025.01); H10D 30/6757 (2025.01); H10D 64/62 (2025.01); H10D 86/423 (2025.01); H10D 86/60 (2025.01); H10D 87/00 (2025.01); H10D 99/00 (2025.01); H10F 39/12 (2025.01); H10H 29/10 (2025.01); H10D 84/08 (2025.01); H10D 84/811 (2025.01); H10D 84/83 (2025.01); H10D 88/00 (2025.01)] | 4 Claims |
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1. A semiconductor device comprising:
a substrate;
a first conductive film over the substrate;
a first insulating film over the first conductive film;
a second insulating film over the first insulating film;
an oxide semiconductor film and a second conductive film over the second insulating film;
a third insulating film over the oxide semiconductor film and the second conductive film;
a fourth insulating film over the third insulating film; and
a third conductive film over the fourth insulating film,
wherein the first conductive film is configured to function as a first gate electrode of a transistor,
wherein the third conductive film is configured to function as a second gate electrode of the transistor,
wherein the oxide semiconductor film comprises a channel formation region of the transistor,
wherein the second conductive film comprises a fourth conductive film, a fifth conductive film, and a sixth conductive film,
wherein the fourth conductive film is in contact with the first conductive film in a first opening provided in the first insulating film and the second insulating film,
wherein the third conductive film is in contact with the sixth conductive film in a second opening provided in the third insulating film and the fourth insulating film, and
wherein an end portion of the fifth conductive film comprises copper and silicon.
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