CPC H10D 30/6723 (2025.01) [C23C 14/18 (2013.01); C23C 14/24 (2013.01); G02F 1/133382 (2013.01); G02F 1/136209 (2013.01); G02F 1/13685 (2021.01); H10D 86/021 (2025.01); G02F 2202/36 (2013.01)] | 11 Claims |
1. An array substrate, comprising a substrate and a thin film transistor disposed on the substrate; wherein the thin film transistor comprises a semiconductor layer and further comprises a light-shielding and heat-insulating layer, wherein the semiconductor layer is disposed above the light-shielding and heat-insulating layer;
wherein the light-shielding and heat-insulating layer comprises a light-shielding matrix and a intertwined cluster structure; wherein the light-shielding matrix comprises a porous structure, the porous structure comprising a plurality of holes, and the intertwined cluster structure is disposed in the plurality of holes;
wherein the light-shielding and heat-insulating layer is configured for shielding incident light, and the intertwined cluster structure is configured for absorbing heat generated by the incident light;
wherein the intertwined cluster structure comprises a reflective material and a heat-absorbing material, and wherein the reflective material and the heat-absorbing material are mixed to form the intertwined cluster structure; wherein the reflective material is an alloy of at least two selected from the group consisting of silver, copper, aluminum, iron, and titanium; and wherein the heat-absorbing material is any one selected from the group consisting of a graphene sheet, polyaniline, a carbon nanotube, carbon black, and zinc oxide.
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