| CPC H10D 30/663 (2025.01) [H10D 30/0291 (2025.01); H10D 62/116 (2025.01); H10D 64/518 (2025.01)] | 20 Claims |
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1. A structure comprising:
a drift region within a semiconductor substrate;
a body contact within the semiconductor substrate;
a shallow trench isolation structure within the drift region and adjacent to the body contact; and
a gate structure partly extending within the shallow trench isolation structure and outside of the shallow trench isolation structure on an upper surface of the body contact within the semiconductor substrate adjacent to the drift region.
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