US 12,408,367 B2
Semiconductor device
Che-Yu Lin, Hsinchu (TW); Ming-Hua Yu, Hsinchu (TW); Tze-Liang Lee, Hsinchu (TW); and Chan-Lon Yang, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Jul. 17, 2023, as Appl. No. 18/353,875.
Application 18/353,875 is a continuation of application No. 17/074,287, filed on Oct. 19, 2020, granted, now 11,749,756.
Application 17/074,287 is a continuation of application No. 16/035,476, filed on Jul. 13, 2018, granted, now 10,811,537, issued on Oct. 20, 2020.
Application 16/035,476 is a continuation of application No. 14/954,661, filed on Nov. 30, 2015, granted, now 10,026,843, issued on Jul. 17, 2018.
Prior Publication US 2023/0378361 A1, Nov. 23, 2023
Int. Cl. H10D 30/62 (2025.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 21/762 (2006.01); H01L 23/544 (2006.01); H10D 30/01 (2025.01); H10D 30/69 (2025.01); H10D 62/10 (2025.01); H10D 62/17 (2025.01); H10D 62/834 (2025.01)
CPC H10D 30/6211 (2025.01) [H01L 21/02057 (2013.01); H01L 21/26513 (2013.01); H01L 21/324 (2013.01); H01L 21/76224 (2013.01); H01L 21/76229 (2013.01); H01L 23/544 (2013.01); H10D 30/024 (2025.01); H10D 30/797 (2025.01); H10D 62/115 (2025.01); H10D 62/235 (2025.01); H10D 62/834 (2025.01); H01L 2223/54426 (2013.01); H01L 2223/54453 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a fin structure over a substrate, wherein the fin structure comprises:
a bottom portion protruding from the substrate; and
a top portion over the bottom portion, wherein a composition of the bottom portion is different from a composition of the top portion, and an interface between the bottom portion and the top portion comprises oxygen and has an oxygen concentration lower than about 1.E+19 atoms/cm3;
a gate structure covering the fin structure; and
a first source/drain epitaxial structure and a second source/drain epitaxial structure over the top portion of the fin structure and on opposite sides of the gate structure.