US 12,408,366 B2
Protection device structures with a discontinuous isolation well
Anindya Nath, Essex Junction, VT (US); Alain Loiseau, Williston, VT (US); and Rajendran Krishnasamy, Essex Junction, VT (US)
Assigned to GlobalFoundries U.S. Inc., Malta, NY (US)
Filed by GlobalFoundries U.S. Inc., Malta, NY (US)
Filed on Jun. 3, 2022, as Appl. No. 17/831,496.
Prior Publication US 2023/0395714 A1, Dec. 7, 2023
Int. Cl. H10D 62/17 (2025.01); H10D 30/01 (2025.01); H10D 30/60 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 89/60 (2025.01)
CPC H10D 30/603 (2025.01) [H10D 30/0221 (2025.01); H10D 84/0191 (2025.01); H10D 84/038 (2025.01)] 15 Claims
OG exemplary drawing
 
1. A structure comprising:
a semiconductor substrate having a top surface;
a first well of a first conductivity type in the semiconductor substrate, the first well including a plurality of segments;
a second well of a second conductivity type in the semiconductor substrate, the second conductivity type different from the first conductivity type, the second well positioned in a vertical direction between the segments of the first well and the top surface of the semiconductor substrate, and the second well overlapping with the segments;
a third well of the first conductivity type in the semiconductor substrate, the third well positioned in a lateral direction adjacent to the second well; and
a fourth well of the first conductivity type in the semiconductor substrate, the fourth well positioned in the lateral direction adjacent to the second well,
wherein the second well is positioned in the lateral direction between the third well and the fourth well.